Nonlithographic nano-wire arrays: Fabrication, physics, and device applications
Nonlithographic nano-wire arrays: Fabrication, physics, and device applications
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DOI：
10.1109/16.536810
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发表时间：
1996-10-01
影响因子：
3.1
通讯作者：
Xu, JM
中科院分区：
文献类型：
--
作者：
Routkevitch, D;Tager, AA;Xu, JM
描述了一种新的纳米结构系统，其由直接电沉积到多孔阳极氧化铝模板中的非光刻产生的纳米线阵列组成。使用这种方法，可以产生金属或半导体纳米线或纳米点的规则且均匀的阵列，其直径范围从近似5 nm到几百纳米，并且面积孔密度在近似10（9）-10（11）cm（-2）的范围内。我们报告目前的状态，他们的制造，性能和未来的设备应用。本文给出了金属（Ni，Fe）和半导体（CdS，CdSe，CdSxSe_（1-x），CdxZn_（1-x）S和GaAs）丝的X射线衍射、拉曼和磁性测量结果。由纳米阵列制成的两端器件的I-V特性表现出室温周期性电导振荡和库仑阻塞电流阶梯。这些观察结果可能与阵列中自然形成的超小隧道结有关。单电子隧穿（SET）在这些阵列中的存在下的线间耦合示出，导致自发的静电极化的电线。还讨论了可能的器件应用，如磁存储器或传感器，电致发光平板显示器，纳米电子和单电子器件。
A novel system of nanostructures is described consisting of nonlithographically produced arrays of nano-wires directly electrodeposited into porous anodic aluminum oxide templates. Using this method regular and uniform arrays of metal or semiconductor nano-wires or nano-dots can be created with diameters ranging from similar to 5 nm to several hundred nanometers and with areal pore densities in the similar to 10(9)-10(11) cm(-2) range. We report on the present state of their fabrication, properties, and prospective device applications. Results of X-ray diffraction, Raman and magnetic measurements on metal (Ni, Fe) and semiconductor (CdS, CdSe, CdSxSe1-x, CdxZn1-xS and GaAs) wires are presented. The I-V characteristics of two terminal devices made from the nano-arrays are found to exhibit room temperature periodic conductance oscillations and Coulomb-blockade like current staircases. These observations are likely associated with the ultra-small tunnel junctions that are formed naturally in the arrays. Single-electron tunneling (SET) in the presence of interwire coupling in these arrays is shown to lead to the spontaneous electrostatic polarization of the wires. Possible device applications such as magnetic memory or sensors, electroluminescent flat-panel displays, and nanoelectronic and single-electronic devices are also discussed.