Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films
Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films
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DOI：
10.1155/2014/806327
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发表时间：
2014-02
影响因子：
1.5
通讯作者：
Xiao Zhang;Wei Zhang;Xinghua Zhang;Xuewen Xu;F. Meng;Chengchun Tang
中科院分区：
文献类型：
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作者：
Xiao Zhang;Wei Zhang;Xinghua Zhang;Xuewen Xu;F. Meng;Chengchun Tang
采用共溅射法在不同氧分压下制备了ZnO多晶薄膜。在纯氩气中沉积的薄膜表现出铁磁性，而在不同氧分压下沉积的其他薄膜则表现出抗磁性。XPS分析结果表明，样品中均存在Zn间隙和氧空位.进一步的分析表明，Zn间隙可能通过诱导电子构型的改变而在未掺杂ZnO薄膜上触发磁有序中起重要作用。
Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.