Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures
Spatial inhomogeneity of photoluminescence in InGaN single quantum well structures
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InGaN单量子阱结构光致发光的空间不均匀性
DOI：
10.1002/1521-3951(200111)228:1
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
S. Fujita
中科院分区：
文献类型：
--
作者：
A. Kaneta;Giichi Marutsuki;K. Okamoto;Y. Kawakami;Y. Nakagawa;G. Shinomiya;T. Mukai;S. Fujita
通过照明-收集模式下的荧光显微镜和扫描近场光学显微镜 (SNOM) 评估了 InGaN 单量子阱 (SQW) 结构中光致发光 (PL) 光谱的空间分布。 77 K 时荧光图像的 PL 强度均匀，但随着温度的升高，暗斑区域扩大。近场 PL 图像揭示了 PL 光谱中峰值能量和强度随探测位置的变化，尺度小于几百 nm。
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The near-field PL images revealed the variation of both peak energy and intensity in PL spectra according to the probing location with the scale less than a few hundreds nm.