InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors
InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors
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DOI：
10.1117/12.842065
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发表时间：
2010-01
影响因子：
6
通讯作者：
M. Walther;R. Rehm;J. Schmitz;J. Fleissner;F. Rutz;L. Kirste;R. Scheibner;J. Wendler;J. Ziegler
中科院分区：
文献类型：
--
作者：
M. Walther;R. Rehm;J. Schmitz;J. Fleissner;F. Rutz;L. Kirste;R. Scheibner;J. Wendler;J. Ziegler
基于GaSb、InAs和AlSb的InAs/GaSb短周期超晶格（SL）在高性能红外探测器方面具有巨大的潜力。目前，用于3 - 30 μm波段的第二代和第三代先进红外探测器的短周期InAs/GaSb超晶格的研究引起了人们的极大兴趣。为了制造中波长红外区（MWIR）的单谱和双谱热成像系统，已经开发了用于高响应度热成像系统的可制造技术。InAs/GaSb短周期超晶格的本征区周期数可达1000个，且不表现出扩散限制行为。这使得制造的InAs/GaSb SL相机系统具有高响应度的最先进的CdHgTe和InSb探测器。该材料系统也非常适合用于制造具有高量子效率的双色MWIR/MWIR InAs/GaSb SL相机系统，用于导弹接近警告系统，在两个光谱通道中同时进行空间重合检测。
InAs/GaSb short-period superlattices (SL) based on GaSb, InAs and AlSb have proven their great potential for high performance infrared detectors. Lots of interest is currently focused on the development of short-period InAs/GaSb SLs for advanced 2nd and 3rd generation infrared detectors between 3 - 30 μm. For the fabrication of mono- and bispectral thermal imaging systems in the mid-wavelength infrared region (MWIR) a manufacturable technology for high responsivity thermal imaging systems has been developed. InAs/GaSb short-period superlattices can be fabricated with up to 1000 periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of InAs/GaSb SL camera systems with high responsivity comparable to state of the art CdHgTe and InSb detectors. The material system is also ideally suited for the fabrication of dual-color MWIR/MWIR InAs/GaSb SL camera systems with high quantum efficiency for missile approach warning systems with simultaneous and spatially coincident detection in both spectral channels.