Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials
Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials
复制标题
利用金属氧化物和介电材料的相关效应控制量子点的自发发射
DOI:
10.1088/1361-6528/aa5779
复制
发表时间:
2017
期刊:
影响因子:
3.5
通讯作者:
L. Capps
中科院分区:
文献类型:
--
作者:
S. M. Sadeghi;Waylin J Wing;Rithvik R. Gutha;L. Capps
We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.
影响因子:
3.2
作者:
Patty,Kira;Sadeghi,SeyedM;Campbell,Quinn;Hamilton,Nathan;West,RobertG;Mao,Chuanbin
通讯作者:
Mao,Chuanbin