Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence
Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence
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DOI：
10.1063/1.4795793
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发表时间：
2013-03
影响因子：
4
通讯作者：
I. Seetoh;C. B. Soh;E. Fitzgerald;S. Chua
中科院分区：
文献类型：
--
作者：
I. Seetoh;C. B. Soh;E. Fitzgerald;S. Chua
采用稳态光致发光技术，在不同激光激发功率和样品温度下，研究了金属-有机化学气相沉积InN薄膜中的俄歇复合现象。在低温下，它优于辐射复合和Shockley-Read-Hall复合，这导致了集成光致发光强度与激光激发功率之间的亚线性关系。随着温度的升高，俄歇复合率逐渐增加，活化能为10-17 meV，与文献报道的瞬态光致发光值一致。由于俄歇复合率与材料质量无关，因此它们可能会形成InN发光效率的上限。
Auger recombination in InN films grown by metal-organic chemical vapor deposition was studied by steady-state photoluminescence at different laser excitation powers and sample temperatures. It was dominant over radiative recombination and Shockley-Read-Hall recombination at low temperatures, contributing to the sub-linear relationship between the integrated photoluminescence intensity and laser excitation power. Auger recombination rates increased gradually with temperature with an activation energy of 10–17 meV, in good agreement with values from transient photoluminescence reported in literature. As the Auger recombination rates were independent of material quality, they may form an upper limit to the luminous efficiency of InN.