Environmental effects on interfacial adhesion
Environmental effects on interfacial adhesion
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DOI：
10.1016/s0026-2714(01)00150-0
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发表时间：
2001-09-01
影响因子：
1.6
通讯作者：
Dauskardt, RH
中科院分区：
文献类型：
--
作者：
Lane, MW;Snodgrass, JM;Dauskardt, RH
研究了温度和湿度对薄膜互连结构中常见界面可靠性的影响。在金属/SiO2和聚合物/SiO2界面的一系列环境条件下收集脱粘生长速率与脱粘驱动能曲线（V-G曲线）。对于金属/SiO2系统，V-G曲线被发现是相对不敏感的温度在0 - 85 degreesC的范围内的增加，但强烈的影响，在周围环境中的水分含量。在金属/SiO2系统中的确切行为取决于脱粘路径和薄膜堆叠的结构。发现脱粘推进的控制机制随着整体堆叠结构的改变而改变。发现聚合物/SiO2系统显示出与金属/SiO2系统相同的对水分的敏感性，表明类似的机制导致脱粘进展。在这两个系统中确定的机制解释的显着的化学反应发生在脱粘尖端。探讨了粘结功或粘结断裂功与宏观断裂功之间的关系，宏观断裂功包括非线性能量吸收过程，如塑性。(C)2001爱思唯尔科技有限公司版权所有。
The effects of temperature and moisture on the reliability of interfaces commonly found in thin-film interconnect structures were investigated. Debond growth rate vs. debond driving energy curves (V-G curves) were collected over a range of environmental conditions for both metal/SiO2 and polymer/SiO2 interfaces. For the metal/SiO2 system, the V-G curves were found to be relatively insensitive to increases in temperature over the range of 0 - 85 degreesC but strongly influenced by the moisture content in the surrounding environment. The exact behavior in the metal/SiO2 system depended on the debond path and the structure of the thin film stack. The controlling mechanism for debond advance was found to change as the overall stack structure was altered. The polymer/SiO2 system was found to show the same sensitivity to moisture as the metal/SiO2 system indicating a similar mechanism was leading to debond advance. The mechanisms identified in both systems are explained in terms of the salient chemical reactions occurring at the debond tip. The relationship between the work of adhesion, or bond breaking process, and the macroscopic work of fracture, which includes non-linear energy absorbing processes such as plasticity, was explored. (C) 2001 Elsevier Science Ltd. All rights reserved.