Impact of Coulomb Scattering on the Ultrafast Gain Recovery in InGaAs Quantum Dots
Impact of Coulomb Scattering on the Ultrafast Gain Recovery in InGaAs Quantum Dots
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DOI:
10.1103/physrevlett.101.256803
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发表时间:
2008-12-19
影响因子:
8.6
通讯作者:
Knorr, A.
中科院分区:
文献类型:
--
作者:
Gomis-Bresco, J.;Dommers, S.;Knorr, A.
The application of quantum dot (QD) semiconductor optical amplifiers (SOAs) in above 100-Gbit Ethernet networks demands an ultrafast gain recovery on time scales similar to that of the input pulse similar to 100 GHz repetition frequency. Microscopic scattering processes have to act at shortest possible time scales and mechanisms speeding up the Coulomb scattering have to be explored, controlled, and exploited. We present a microscopic description of the gain recovery by coupled polarization- and population dynamics in a thermal nonequilibrium situation going beyond rate-equation models and discuss the limitations of Coulomb scattering between 0D and 2D-confined quantum states. An experiment is designed which demonstrates the control of gain recovery for THz pulse trains in InGaAs QD-based SOAs under powerful electrical injection.