Interference lithography processes with high-power laser pulses
Interference lithography processes with high-power laser pulses
复制标题
DOI：
10.1117/12.808834
复制
发表时间：
2009-02
期刊：
影响因子：
--
通讯作者：
A. Rodríguez;M. Ellman;I. Ayerdi;N. Perez;S. Olaizola;J. Zhang;Z. Ji;T. Berthou;C. Peng;Y. K. Verevkin;Z. Wang
中科院分区：
文献类型：
--
作者：
A. Rodríguez;M. Ellman;I. Ayerdi;N. Perez;S. Olaizola;J. Zhang;Z. Ji;T. Berthou;C. Peng;Y. K. Verevkin;Z. Wang
激光干涉光刻(LIL)是指利用两束或几束相干激光辐射产生的干涉图案来构造材料。本文介绍了基于抗蚀剂和直写激光干涉光刻的工艺研究工作。该工作采用四光束激光干涉系统作为亚微米结构工具，以相干长度为3m、能量功率为320 mJ/cm2、脉冲宽度为8 ns、重复频率为10 Hz的高能脉冲、三倍频、TM偏振的Nd：YAG激光器(355 Nm)为光源。实验结果是用2光束和4光束干涉图样得到的。该工艺可用于定义MEMS领域中使用的大面积亚微米表面浮雕。
Laser interference lithography (LIL) is concerned with the use of interference patterns generated from two or several coherent beams of laser radiation for the structuring of materials. This paper presents the work on the processes based on resists and direct writing with laser interference lithography. In the work, a four-beam laser interference system was used as a submicrometer structuring tool in which a high-energy pulsed, frequency-tripled and TM polarized Nd:YAG laser (355 nm) with a coherent length of 3 m, energy power up to 320 mJ/cm2, pulse duration of 8 ns and 10 Hz repetition rate was used as a light source. The experimental results were achieved with 2-beam and 4-beam interference patterning. The processes can be used to define submicron surface relieves in large areas for use in the field of MEMS.