Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition
Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition
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DOI：
10.1016/j.mssp.2014.08.003
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发表时间：
2014-11
影响因子：
4.1
通讯作者：
Pengcheng Tao;H. Liang;Dongsheng Wang;Xiaochuan Xia;Q. Feng;Yang Liu;Rensheng Shen;Kexiong Zhang-Kexiong-Zh
中科院分区：
文献类型：
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作者：
Pengcheng Tao;H. Liang;Dongsheng Wang;Xiaochuan Xia;Q. Feng;Yang Liu;Rensheng Shen;Kexiong Zhang-Kexiong-Zh
采用金属有机物化学气相沉积（MOCVD）方法在6 H-SiC衬底上生长了无裂纹的AlGaN/GaN近紫外分布布拉格反射器（DBR）。为了抑制裂纹的产生，在第一对AlGaN/GaN DBR层之间引入薄的SiNx夹层。采用这种方法，获得了无裂纹的30对Al0.2Ga0.8N/GaN DBR，其峰值反射率在388 nm处为92.8%，阻带带宽为16 nm。我们的研究结果表明，氮化硅夹层不仅降低了拉伸应变，但也提高了反射率，通过抑制裂纹。
Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6H-SiC substrates by metal–organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNxinterlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNxinterlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks.