Strain-induced band gap shrinkage in Ge grown on Si substrate
Strain-induced band gap shrinkage in Ge grown on Si substrate
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DOI：
10.1063/1.1564868
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发表时间：
2003-03-31
影响因子：
4
通讯作者：
Kimerling, LC
中科院分区：
文献类型：
--
作者：
Ishikawa, Y;Wada, K;Kimerling, LC
对直接生长在Si衬底上的Ge，研究了拉伸应变引起的带隙收缩。在硅上锗pin二极管，光子具有低于体锗的直接带隙的能量被有效地检测。根据光反射测量，这种性质是由于带隙收缩。收缩的起源不是Franz-Keldysh效应，而是拉伸应变。讨论了这种拉应变的产生是由于Ge和Si之间的热膨胀差异引起的。本文还讨论了这种拉伸锗在光电二极管中应用的优点。(C)2003年，美国物理学会。
Band gap shrinkage induced by tensile strain is shown for Ge directly grown on Si substrate. In Ge-on-Si pin diodes, photons having energy lower than the direct band gap of bulk Ge were efficiently detected. According to photoreflectance measurement, this property is due to band gap shrinkage. The origin of the shrinkage is not the Franz-Keldysh effect but rather tensile strain. It is discussed that the generation of such a tensile strain can be ascribed to the difference of thermal expansion between Ge and Si. Advantages of this tensile Ge for application to photodiode are also discussed. (C) 2003 American Institute of Physics.