Ligand and Solvent Effects on Hole Transport in Colloidal Quantum Dot Assemblies for Electronic Devices

Ligand and Solvent Effects on Hole Transport in Colloidal Quantum Dot Assemblies for Electronic Devices
复制标题

DOI:
10.1021/acsanm.8b01205
复制
发表时间:
2018-07
影响因子:
5.9
通讯作者:
Liming Liu;S. Z. Bisri;Y. Ishida;D. Hashizume;T. Aida;Y. Iwasa
Liming Liu;S. Z. Bisri;Y. Ishida;D. Hashizume;T. Aida;Y. Iwasa
中科院分区:
材料科学2区
文献类型:
--
作者:
Liming Liu;S. Z. Bisri;Y. Ishida;D. Hashizume;T. Aida;Y. Iwasa

文献摘要

被引文献

相似文献

胶体形式的半导体量子点(QDs)因其在溶液可处理电子器件中的潜在应用而引起了人们越来越多的兴趣。在量子点组件中控制电子掺杂是推进基于该系统的新型太阳能电池、光电探测器和晶体管的发展所面临的挑战之一。虽然已经成功地证明了几种具有优异导电性的n型QD膜,但总体而言,p型QD膜的导电性较差。发现配体和溶剂工程可以显著增强硫化铅(PbS)量子点薄膜中的空穴传输。羧酸配体盖上通常会产生p型掺杂的PbS QD膜;此外,在各种羧酸配体中,噻吩-2,5-二羧酸提供了具有极高空穴迁移率值的PbS QD膜,而对配体具有高偿付能力的溶剂对于提高载流子迁移率是重要的。配体分子与溶剂的适当结合…
Semiconductor quantum dots (QDs) in colloidal form have attracted growing interest for their potential applications in solution-processable electronic devices. Controlled electronic doping in QD assemblies is one of the challenges required for advancing the development of novel solar cells, photodetectors, and transistors based on this system. While several n-type QD films with excellent conductivity have been successfully demonstrated, in general, p-type QD films have shown poor conductivity. Ligand and solvent engineering were found to permit significant enhancements of hole transport in lead sulfide (PbS) QD films. Capping with a carboxylate ligand generally produces p-type doping of PbS QD films; furthermore, among various carboxylate ligands, thiophene-2,5-dicarboxylic acid provides PbS QD films with exceptionally high hole mobility values, and solvents with a high solvency power for the ligand are important for enhancing carrier mobility. With an appropriate combination of ligand molecule and solven...