Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization
Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization
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DOI：
10.23919/vlsit.2019.8776517
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发表时间：
2019-06
期刊：
影响因子：
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通讯作者：
T. Wen;B. Colombeau;C.l. Li;S. Liu;B. Guo;H. Meer;M. Hou;B. Yang;H.C. Feng;C. Hsu
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文献类型：
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作者：
T. Wen;B. Colombeau;C.l. Li;S. Liu;B. Guo;H. Meer;M. Hou;B. Yang;H.C. Feng;C. Hsu
在先进的FinFET器件中，STI间隙填充和$\vert \text{LD}_{0}$应力是导致鳍缺陷、鳍弯曲以及由于局部布局效应（LLE）导致的器件性能下降的原因。在本文中，第一次，我们看看在不同的方式来调制的应力从流动CVD（FCVD）薄膜通过额外的UV处理和/或离子束处理（热氦注入）。通过利用PROVision™的在线电子束计量功能对关键尺寸（CD）进行大规模测量，可以表征和分析工艺对鳍片间距和LLE的影响。对于nFET器件，观察到LLE的显著改善，这与鳍弯曲的改善相关。此外，在$\text{ILD}_{0}$应力优化后，pFET的驱动电流增益约为5%。
In advanced FinFET devices, STI gap fill and $\vert \text{LD}_{0}$ stress are responsible for fin defects, fin bending as well as device performance degradations due to the local layout effect (LLE). In this paper, for the first time, we look at different ways to modulate the stress from the Flowable CVD (FCVD) films either by additional UV treatment and/or ion beam treatment (hot Helium implantation). By leveraging in-line e-beam metrology capabilities of PROVision™ for massive measurements of critical dimensions (CDs), the process impact on fin spacing and LLEs are characterized and analyzed. Significant improvement for LLE is observed for nFET device which correlates to fin bending improvement. In addition, ~5% drive current gain for pFET is observed after $\text{ILD}_{0}$ stress optimization.