Visual-infrared electroluminescence emission from ZnO∕GaAs heterojunctions grown by metal-organic chemical vapor deposition
Visual-infrared electroluminescence emission from ZnO∕GaAs heterojunctions grown by metal-organic chemical vapor deposition
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DOI：
10.1063/1.2748093
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发表时间：
2007-06
影响因子：
4
通讯作者：
G. Du;Yongguo Cui;Xiaochuan Xia;Xiangping Li;Huichao Zhu;Baolin Zhang;Yuantao Zhang;Yan Ma
中科院分区：
文献类型：
--
作者：
G. Du;Yongguo Cui;Xiaochuan Xia;Xiangping Li;Huichao Zhu;Baolin Zhang;Yuantao Zhang;Yan Ma
采用金属-有机化学气相沉积方法生长了p-ZnO/n-GaAs异质结发光二极管。掺入的As原子从砷化镓衬底扩散到氧化锌薄膜中形成了p-氧化锌薄膜。通过I-V测量和X射线光电子能谱研究了基于As掺杂p-ZnO/n-GaAs、p-ZnO/p-GaAs异质结的As掺杂ZnO薄膜的p型行为。P-ZnO/n-GaAs异质结在室温正向电流注入下的I-V特性表现为整流二极管和可见光-红外电致发光特性。异质结的I-V阈值电压为∼2.5V。
The light-emitting diode of p-ZnO∕n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. The p-ZnO films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The p-type behavior of As-doped ZnO films based on As-doped p-ZnO∕n-GaAs, p-ZnO∕p-GaAs heterojunction was studied by carrying out I-V measurements and x-ray photoelectron spectroscopy. The I-V characteristic of p-ZnO∕n-GaAs heterojunction showed characteristic of rectifying diode and visual-infrared electroluminescence emission under forward current injection at room temperature. The I-V of the heterounction had a threshold voltage of ∼2.5V.