A permanent magnetic film atom chip for Bose–Einstein condensation
A permanent magnetic film atom chip for Bose–Einstein condensation
复制标题
用于玻色-爱因斯坦凝聚的永磁薄膜原子芯片
DOI:
10.1088/0953-4075/39/1/004
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发表时间:
2005
期刊:
影响因子:
--
通讯作者:
A. Sidorov
中科院分区:
文献类型:
--
作者:
B. Hall;Shannon Whitlock;F. Scharnberg;P. Hannaford;A. Sidorov
We present a hybrid atom chip which combines a permanent magnetic film with a micromachined current-carrying structure used to realize a Bose–Einstein condensate (BEC). A novel TbGdFeCo material with large perpendicular magnetization has been tailored to allow small scale, stable magnetic potentials for ultracold atoms. We are able to produce 87Rb BEC in a magnetic trap based on either the permanent magnetic film or the current-carrying structure. Using the condensate as a magnetic field probe we perform cold atom magnetometry to profile both the field magnitude and gradient as a function of distance from the magnetic film surface. Finally, we discuss future directions for our permanent magnetic film atom chip.