Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure
Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure
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基于Au/ZnO/Al结构的电可调谐薄膜体声谐振器
DOI：
10.1063/1.4818157
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发表时间：
2013-08-05
影响因子：
4
通讯作者：
Deen, M. J.
中科院分区：
文献类型：
--
作者：
Dong, S. R.;Bian, X. L.;Deen, M. J.
提出了一种电调谐Au/N-ZnO/ZnO/Al薄膜体声波谐振器（FBAR）。叠层谐振器为Au-压电ZnO层-Al，肖特基二极管结为Au/N-ZnO半导体层。FBAR的谐振频率随着结电容随反向偏压的减小而变化。我们的实验给出了在1.46 GHz的频率偏移为1.30 kHz/V，最大插入损耗为1.07 dB，以及高于1200的非常高的Q因子。电路模拟表明，通过优化FBAR的结构和N-ZnO的掺杂浓度，可调谐范围为± 3.8 MHz。在30 °C至105 °C的温度范围内，电可调谐性从27 kHz/V降至1.5 kHz/V。
An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FBAR's structure and doping concentration of N-ZnO. Electrical tunability decreases from 27 kHz/V to 1.5 kHz/V with temperatures from 30 °C to 105 °C.