High-performance pentacene thin-film transistors with high dielectric constant gate insulators
High-performance pentacene thin-film transistors with high dielectric constant gate insulators
复制标题
具有高介电常数栅极绝缘体的高性能并五苯薄膜晶体管
DOI：
10.1063/1.2400399
复制
发表时间：
2006
影响因子：
4
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
M. Kitamura;Y. Arakawa
具有钛硅氧化物（Ti 1 − xSixO 2）栅极绝缘体的并五苯薄膜晶体管（TFT）已被制造以在实际电压下实现高场效应迁移率。通过射频溅射沉积的Ti 1 − xSixO 2薄膜具有平坦的表面和高的介电常数。具有Ti 1 − xSixO 2栅极绝缘体的并五苯TFT具有高性能，阈值电压为-1.6V，亚阈值斜率为0.13V，在-10V电压下电流开/关比为107。在-2V至-15V的整个电压范围内，获得了高于1cm 2 Vs的场效应迁移率。
Pentacene thin-film transistors (TFTs) with titanium silicon oxide (Ti1−xSixO2) gate insulator have been fabricated to realize high field-effect mobility at practical voltages. The Ti1−xSixO2 films deposited by rf sputtering exhibited a flat surface and high dielectric constant. The pentacene TFT with the Ti1−xSixO2 gate insulator had high performance with a threshold voltage of −1.6V, an inverse subthreshold slope of 0.13V∕decade, and a current on/off ratio of 107 at a voltage of −10V. The field-effect mobilities of higher than 1cm2∕Vs were obtained in the whole voltage range of −2to−15V.