Fabrication of two-point-supported annular-type microresonators with capacitive transducer gaps
Fabrication of two-point-supported annular-type microresonators with capacitive transducer gaps
复制标题
具有电容式换能器间隙的两点支撑环形微谐振器的制造
DOI：
10.1109/nems.2011.6017452
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
T. Mihara
中科院分区：
文献类型：
--
作者：
S. Murakami;M. Konno;T. Ikehara;R. Maeda;T. Mihara
采用面内谐振模式的盘微谐振器是作为用于高灵敏质量感测应用的功能元件的有希望的候选者，因为它们在大气压力下的空气中提供高品质因数（Q）。作者设计并制作了一个内外半径比为0.17的单晶硅环形微机械谐振器。支撑谐振器的梁结构连接到指定的面内谐振模式所期望的两个节点。谐振器被静电驱动，并检测150 nm宽的垂直换能器的间隙，通过沟槽蚀刻的SCS使用深反应离子蚀刻（D-RIE）与电子束光刻图案化的抗蚀剂掩模制造。所制造的谐振器在空气中示出在50.10 MHz处的谐振峰值，Q为3000。测得的峰值谐振频率与有限元模拟预测的频率一致。
Disk microresonators employing in-plane resonant modes are promising candidates as functional elements for high-sensitive mass sensing applications because they provide a high quality factor (Q) in air at atmospheric pressure. The authors have newly designed and fabricated single crystal silicon (SCS) annular micromechanical resonators with an inner to outer radius ratio of 0.17. The beam structures to support the resonator were connected to the two nodal points expected for a specified in-plane resonant mode. The resonator was electrostatically driven and detected with 150-nm-wide vertical transducer gaps that were fabricated by trench etching of the SCS using deep reactive ion etching (D-RIE) with a resist mask patterned by electron beam lithography. The fabricated resonators show a resonant peak at 50.10 MHz with a Q of 3000 in air. The measured peak resonant frequency agreed well with the frequency predicted by finite element simulations.