Schottky barrier height—do we really understand what we measure?
Schottky barrier height—do we really understand what we measure?
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肖特基势垒高度——我们真的了解我们测量的东西吗？
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
R. T. Tung
中科院分区：
文献类型：
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作者：
R. T. Tung
大多数肖特基势垒高度（SBH）的测量技术都包含一个固有的均匀性假设。从SB结实验中获得的绝大多数电特性实际上显示出明确的非均质性证据，这与费米能级位置的独特概念相矛盾，而费米能级位置是费米能级固定模型的重要组成部分。研究还表明，钉钉模型的许多其他基本假设并没有被最近的理论计算所证实。大量表征良好的外延金属-半导体界面的实验数据已经牢固地确立了SBH对局部结构的临界依赖性。因此，理解界面结构的形成可能是任何预测性SB理论的先决条件。
Most measurement techniques of the Schottky barrier height (SBH) contain an inherent assumption of homogeneity. The vast majority of electrical characteristics experimentally obtained from SB junctions actually display clear evidence for inhomogeneities, contradicting the concept of a unique Fermi‐level position which is an essential part of Fermi‐level pinning models. It is also shown that many other basic assumptions of the pinning models are not born out by recent theoretical calculations. A large body of experimental data from well‐characterized epitaxial metal–semiconductor interfaces has firmly established the critical dependence of the SBH on local structure. Thus, understanding the formation of interface structure is likely a prerequisite of any predictive SB theory.