Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems
Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems
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DOI：
10.1063/1.4993908
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发表时间：
2017-07-21
影响因子：
3.2
通讯作者：
Wagner, Bernhard
中科院分区：
文献类型：
--
作者：
Fichtner, Simon;Wolff, Niklas;Wagner, Bernhard
通过Sc部分取代Al形成Al_（1-x）Sc_xN来提高AlN的压电活性，是提高压电微机电系统性能的一种很有前途的方法。在这里，我们提出的证据，在形态的Al 1-xScxN，起源于或接近，基板/Al 1-xScxN界面的不稳定性，并变得更加明显的Sc含量增加。基于透射电子显微镜、压电响应力显微镜、X射线衍射和SEM分析，确定其为（100）取向晶粒的初始形成。方法成功地重新建立排他性的c轴取向x = 0.43的揭示，与电极预处理和阴极-基板的距离产生显着的影响。这使我们能够提出第一次测量的横向薄膜压电系数e（31，f）和介电损耗角正切tan δ超过x = 0.3。由AIP出版社出版。
Enhancing the piezoelectric activity of AlN by partially substituting Al with Sc to form Al1-xScxN is a promising approach to improve the performance of piezoelectric micro-electromechanical systems. Here, we present evidence of an instability in the morphology of Al1-xScxN, which originates at, or close to, the substrate/Al1-xScxN interface and becomes more pronounced as the Sc content is increased. Based on Transmission electron microscopy, piezoresponse force microscopy, X-ray diffraction, and SEM analysis, it is identified to be the incipient formation of (100) oriented grains. Approaches to successfully reestablish exclusive c-axis orientation up to x = 0.43 are revealed, with electrode pre-treatment and cathode-substrate distance found to exert significant influence. This allows us to present first measurements of the transversal thin film piezoelectric coefficient e(31,f) and dielectric loss tangent tan delta beyond x = 0.3. Published by AIP Publishing.