STRONG INCREASE OF THE EFFECTIVE POLARIZATION OF THE TUNNEL CURRENT IN FE/ALOX/AL JUNCTIONS WITH DECREASING FE LAYER THICKNESS
STRONG INCREASE OF THE EFFECTIVE POLARIZATION OF THE TUNNEL CURRENT IN FE/ALOX/AL JUNCTIONS WITH DECREASING FE LAYER THICKNESS
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随着Fe层厚度的减小，Fe/Alox/Al结中隧道电流的有效极化急剧增加
DOI：
10.1103/physrevb.58.4660
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发表时间：
1998
影响因子：
3.7
通讯作者：
T. Yamauchi
中科院分区：
文献类型：
--
作者：
K. Mizushima;T. Kinno;K. Tanaka;T. Yamauchi
测量了由Fe/A L Ox发射极、Al/Fe/Au基区和n型硅集电极组成的三端器件的磁电阻比随发射极中Fe层厚度的变化.随着铁层厚度的减小，这一比例逐渐增大，当铁层厚度为0.8 nm时，这一比例最高可达100%。结果用唯象模型进行了分析，该模型考虑了电子从发射区到基区的自旋极化隧穿以及基区中与自旋相关的热电子输运。当注入电压为1V时，从0.8 nm Fe电极注入的电子的自旋极化约为40%。这是由于二维Fe电极对电子隧穿的自旋反转散射的抑制所致。
The voltage dependence of the magnetoresistance ratio in a three-terminal device that consists of an F e/A l O x emitter, an Al/Fe/Au base, and an n-type Si collector, was measured while changing the thickness of an Fe layer in the emitter. The ratio increased with decreasing the Fe thickness and was as large as 100% for a thickness of 0.8 nm. The results were analyzed by a phenomenological model that took into account the spin-polarized tunneling of electrons from the emitter into the base as well as the spin-dependent hot electron transport in the base. The spin polarization of electrons injected from the 0.8-nm Fe was estimated to be about 40% even at the injection voltage of 1 V. It was suggested that the large polarization was caused by the suppression of spin-flip scattering for electrons tunneling from the two-dimensional Fe electrodes.