Raman and X-ray photoelectron spectroscopy study of carbon nitride thin films
Raman and X-ray photoelectron spectroscopy study of carbon nitride thin films
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DOI：
10.1016/s0169-4332(99)00278-0
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发表时间：
1999-10
影响因子：
6.7
通讯作者：
P. Petrov;D. Dimitrov;D. Papadimitriou;G. Beshkov;V. Krastev;C. Georgiev
中科院分区：
文献类型：
--
作者：
P. Petrov;D. Dimitrov;D. Papadimitriou;G. Beshkov;V. Krastev;C. Georgiev
采用电子束蒸发石墨和低能氮离子轰击相结合的方法在Si（100）衬底上沉积了氮化碳薄膜。通过拉曼和X射线光电子能谱对其进行了分析。所形成的非晶层是四面体键合的，并且由sp3碳键与其最近的邻居之间的一个氮原子组成。四面体键合的碳原子被氮取代导致纳米晶金刚石相的重量百分比的降低和嵌入在非晶碳层中的CNx相的形成。通过改变沉积条件，sp2和sp3键C-N发生重新分布。
Carbon nitride thin films were deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. They were analysed by Raman and X-ray photoelectron spectroscopy. The formed amorphous layers are tetrahedrally bonded and consist of sp3carbon bonds with one nitrogen atom among its nearest neighbours. Substitution of the tetrahedrally bonded carbon atom by nitrogen leads to decrease of the percentage weight of the nanocrystalline diamond phase and formation of a CNxphase embedded in the amorphous carbon layer. By changing the deposition conditions, redistribution of sp2and sp3bonded C–N occurs.