Electron effective mass in hexagonal GaN
Electron effective mass in hexagonal GaN
复制标题
六方氮化镓中的电子有效质量
DOI：
10.1063/1.125567
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发表时间：
1999
影响因子：
4
通讯作者：
P. Wyder
中科院分区：
文献类型：
--
作者：
A. Witowski;K. Pakuła;J. Baranowski;M. Sadowski;P. Wyder
用傅里叶变换光谱仪对蓝宝石外延GaN层浅施主进行了远红外磁光研究，最高能达23T。由施主p态在磁场中的分裂，得到导电电子的回旋有效质量m*=0.222 m0。通过高质量的光谱和考虑12T以上的强磁场数据，精确地确定了质量。
Far-infrared magneto-optical investigations of shallow donors in epitaxial GaN layers on sapphire were carried out by means of Fourier transform spectrometry up to 23 T. From the splitting of the donor p states in a magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m0. A precise determination of the mass was made possible by the high quality of the spectra and by taking into account high magnetic field data above 12 T.