Modeling on domain switching in ferroelectric ceramics near the morphotropic phase boundary

Modeling on domain switching in ferroelectric ceramics near the morphotropic phase boundary
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铁电陶瓷接近同形相界的磁畴切换建模

DOI:
10.1063/1.3153282
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发表时间:
2009-06
影响因子:
3.2
通讯作者:
Li, F. X.
Li, F. X.
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Li, Y. W.;Li, F. X.

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本文采用逆极图(IPF)方法,建立了铁电陶瓷在四方相和菱形相共存的亲晶相边界(MPB)附近的微力学模型,分析了其畴转换过程。考虑了铁电陶瓷中的电荷屏蔽效应,从而消除了极化开关的去极化场。然而,非180°切换引起的机械约束不能被忽视,并且假定与非180°域切换引起的切换应变成正比,并以因子β作为约束水平的度量。利用IPF方法,通过单位球面上的积分,可以显式地得到畴切换引起的极化和应变。本文研究了两种极限情况,即相间非180°开关的能垒等于或远大于同相非180°开关的能垒。在前一种情况下,我们发现域总是倾向于切换…
In this paper, domain switching in ferroelectric ceramics near the morphotropic phase boundary (MPB), where tetragonal phase and rhombohedral phase coexist, is analyzed by a micromechanical model using an inverse-pole-figure (IPF) method. Charge screening effect in ferroelectric ceramics is taken into account, thus the depolarization field by polarization switching vanishes. The mechanical constraint caused by non-180° switching, however, cannot be neglected and is assumed to be proportional to the switching strain caused by non-180° domain switching with a factor β as the measure of the constrained level. Using the IPF method, the domain switching induced polarization and strain can be explicitly obtained via integrations over the unit spherical surface. Two limiting cases are studied in this paper, i.e., the energy barrier for the interphase non-180° domain switching is equal to or much larger than that for the in-phase non-180° switching. In the former case, it is found that domains always tend to swit...
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