Modeling on domain switching in ferroelectric ceramics near the morphotropic phase boundary
Modeling on domain switching in ferroelectric ceramics near the morphotropic phase boundary
复制标题
铁电陶瓷接近同形相界的磁畴切换建模
DOI:
10.1063/1.3153282
复制
发表时间:
2009-06
影响因子:
3.2
通讯作者:
Li, F. X.
中科院分区:
文献类型:
--
作者:
Li, Y. W.;Li, F. X.
In this paper, domain switching in ferroelectric ceramics near the morphotropic phase boundary (MPB), where tetragonal phase and rhombohedral phase coexist, is analyzed by a micromechanical model using an inverse-pole-figure (IPF) method. Charge screening effect in ferroelectric ceramics is taken into account, thus the depolarization field by polarization switching vanishes. The mechanical constraint caused by non-180° switching, however, cannot be neglected and is assumed to be proportional to the switching strain caused by non-180° domain switching with a factor β as the measure of the constrained level. Using the IPF method, the domain switching induced polarization and strain can be explicitly obtained via integrations over the unit spherical surface. Two limiting cases are studied in this paper, i.e., the energy barrier for the interphase non-180° domain switching is equal to or much larger than that for the in-phase non-180° switching. In the former case, it is found that domains always tend to swit...
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DOI:
10.1088/0953-8984/18/35/018
发表时间:
2006-08
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
作者:
R. Chien;C. Tu;V. H. Schmidt;F.-T. Wang
通讯作者:
R. Chien;C. Tu;V. H. Schmidt;F.-T. Wang
影响因子:
3.9
作者:
通讯作者:
--
DOI:
10.1007/978-3-662-07189-2
发表时间:
2004-03
期刊:
--
影响因子:
--
作者:
D. Lupascu
通讯作者:
D. Lupascu
影响因子:
9.4
作者:
K. Bhattacharya;G. Ravichandran
通讯作者:
K. Bhattacharya;G. Ravichandran
DOI:
10.1093/acprof:oso/9780198507789.001.0001
发表时间:
1977-10
期刊:
--
影响因子:
--
作者:
M. Lines;A. Glass;G. Burns
通讯作者:
M. Lines;A. Glass;G. Burns