The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes
The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes
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DOI：
10.1063/1.4820450
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发表时间：
2013-09
影响因子：
3.2
通讯作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
中科院分区：
文献类型：
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作者：
Xiaoming Wu;Junlin Liu;Chuanbing Xiong;Jianli Zhang;Z. Quan;Qinghua Mao;F. Jiang
采用金属有机化学气相沉积法在硅衬底上生长了InGaN/GaN多量子阱发光二极管。基于相同的结构，用硅重掺杂不同的阻挡层。在器件上进行了温度依赖性电致发光。结果表明，在远离n型层的势垒处重掺杂硅会导致两个发射峰。随着掺杂势垒层靠近n型层，两个峰之间的能隙变窄。在势垒中掺杂的硅被认为产生从掺杂势垒朝向p型层的p-n结内建场。该场补偿掺杂势垒和p型层之间的阱中的压电场。这导致该（这些）阱的更高的发射能量。当掺杂势垒更接近n型层时，补偿不太显著。
InGaN/GaN multiple quantum well (MQW) light emitting diodes were grown on silicon substrate by metal organic chemical vapor deposition. A different barrier was heavily doped with silicon based on the same structure. Temperature dependent electroluminescence was performed on the devices. The results reveal that heavily doping the barrier distant from the n-type layer with silicon causes two emission peaks. As the doped barrier gets closer to n-type layer, the energy gap between the two peaks becomes narrower. Silicon doped in the barrier is believed to generate p-n junction built-in field from the doped barrier towards p-type layer. This field compensates the piezoelectric field in the well(s) between the doped barrier and p-type layer. It results in higher emission energy of this (these) well(s). When the doped barrier gets closer to the n-type layer, the compensation is less significant.