Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments
Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments
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DOI：
10.1016/j.matlet.2008.12.008
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发表时间：
2009-03-15
影响因子：
3
通讯作者：
Shoji, Fumiya
中科院分区：
文献类型：
--
作者：
Luo, Suning;Okada, Koichi;Shoji, Fumiya
在含氢量为0.3 ~ 1.5%的工作气体中溅射沉积的氧化铟锡多晶薄膜对可见光的透过率为>= 80%，光吸收能蓝移为>= 0.1 eV。在含氢量为1%的气体中沉积的薄膜显示出几乎平坦的温度相关电阻率，室温下的最低电阻率为= 1.5 x 10(-4) ω cm。载流子密度呈反v型，在氢浓度为1%时达到最大值。在氢浓度为1%以下，迁移率几乎保持不变，而在氢浓度为1%以上，迁移率迅速下降。(C) 2008 Elsevier B.V.版权所有
Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3-1.5% exhibited transmittance of >= 80% for visible lights and blue-shift of >= 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of = 1.5 x 10(-4) Omega cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%. (C) 2008 Elsevier B.V. All rights reserved.