Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors
Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors
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DOI：
10.1016/j.mejo.2008.06.029
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发表时间：
2009-03-01
影响因子：
2.2
通讯作者：
Resel, R.
中科院分区：
文献类型：
--
作者：
Jakabovic, J.;Kovac, J.;Resel, R.
报道了用于有机电子器件钝化和有机场效应管(OFET)栅电介质开发的聚对二甲苯C薄膜的制备和表征。所研究的薄层是在室温下从汽相中沉积出来的，厚度在3~800 nm之间。用椭偏仪和原子力显微镜对聚对二甲苯层的厚度和表面形貌进行了表征。用X射线反射率、衍射率和显微拉曼光谱分析了对二甲苯的结构质量。测量证实了对二甲苯层的完美的均一性和结构特性。在具有底部接触结构的二氧化硅和对二甲苯表面制备了两种并五苯结构的场效应管。结果表明，采用对二甲苯作为栅介质层是制备具有较好电学特性的场效应管的有效方法。(C)2008爱思唯尔有限公司。保留所有权利。
We report on the fabrication and characterization of parylene C thin layers for organic electronic devices passivation and gate dielectric of organic field effect transistors (OFETs) development. The investigated thin parylene layers were deposited from the vapour phase in thickness ranging from 3 to 800 nm at room temperature. The thickness and surface morphology of parylene layers were characterized by ellipsometry and AFM technique. The quality of parylene structures were analysed by X-ray reflectivity and diffraction as well as micro-Raman spectroscopy. The measurements confirmed perfect homogeneity and structural properties of parylene layers. Two types of pentacene OFETs were prepared on the silicone dioxide and parylene surface with bottom contact structures. The results demonstrated that using parylene, as the gate dielectric layer is an effective method to fabricate OFETs with improved electric characteristics. (C) 2008 Elsevier Ltd. All rights reserved.