Mathematical analysis of the limiting behaviors of a chromatin modification circuit
Mathematical analysis of the limiting behaviors of a chromatin modification circuit
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染色质修饰电路限制行为的数学分析
DOI:
10.1007/s00498-023-00343-8
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发表时间:
2023
期刊:
影响因子:
--
通讯作者:
Del Vecchio, Domitilla
中科院分区:
文献类型:
--
作者:
Bruno, Simone;Williams, Ruth J.;Del Vecchio, Domitilla
In the last decade, the interactions among histone modifications and DNA methylation and their effect on the DNA structure, i.e., chromatin state, have been identified as key mediators for the maintenance of cell identity, defined as epigenetic cell memory. In this paper, we determine how the positive feedback loops generated by the auto- and cross-catalysis among repressive modifications affect the temporal duration of the cell identity. To this end, we conduct a stochastic analysis of a recently published chromatin modification circuit considering two limiting behaviors: fast erasure rate of repressive histone modifications or fast erasure rate of DNA methylation. In order to perform this mathematical analysis, we first show that the deterministic model of the system is a singular singularly perturbed (SSP) system and use a model reduction approach for SSP systems to obtain a reduced one-dimensional model. We thus analytically evaluate the reduced system’s stationary probability distribution and the mean switching time between active and repressed chromatin states. We then add a computational study of the original reaction model to validate and extend the analytical findings. Our results show that the absence of DNA methylation reduces the bias of the system’s stationary probability distribution toward the repressed chromatin state and the temporal duration of this state’s memory. In the absence of repressive histone modifications, we also observe that the time needed to reactivate a repressed gene with an activating input is less stochastic, suggesting that repressive histone modifications specifically contribute to the highly variable latency of state reactivation.
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DOI:
10.2307/3620310
发表时间:
1989-10
期刊:
--
影响因子:
--
作者:
S. Wiggins
通讯作者:
S. Wiggins
影响因子:
3.4
作者:
Kim, Jae Kyoung;Josic, Kresimir;Bennett, Matthew R.
通讯作者:
Bennett, Matthew R.
影响因子:
4.3
作者:
Simone Bruno;Ruth J. Williams;D. Vecchio
通讯作者:
Simone Bruno;Ruth J. Williams;D. Vecchio
影响因子:
5.7
作者:
V. Sobolev
通讯作者:
V. Sobolev
影响因子:
5.2
作者:
Suming Huang;M. Litt;C. A. Blakey
通讯作者:
C. A. Blakey