Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3
Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3
复制标题
SrTiO3 缺陷的深度分辨阴极发光光谱研究
DOI：
10.1116/1.2918315
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发表时间：
2008
影响因子：
1.4
通讯作者：
L. Brillson
中科院分区：
文献类型：
--
作者：
Jun Zhang;S. Walsh;C. Brooks;D. Schlom;L. Brillson
作者报告了对 SrTiO3 单晶和外延层中的缺陷及其分布的深度分辨阴极发光光谱研究。在 SrTiO3 单晶中，主要缺陷是氧空位，主要位于自由表面附近，而 Ti 间隙则位于更深处。真空退火增加了 SrTiO3 表面的氧空位密度，但降低了更深的 Ti 间隙原子的密度。在外延层中，缺陷的密度和分布取决于薄膜厚度和化学计量。结果揭示了 SrTiO3 原生点缺陷及其深度分布对外延生长和工艺条件的强烈依赖性。
The authors report a depth-resolved cathodoluminescence spectroscopy study of defects and their distributions in SrTiO3 single crystals and epilayers. In SrTiO3 single crystals, the dominant defects are oxygen vacancies that locate mainly near the free surface, while Ti interstitials locate further into the bulk. Vacuum annealing increases the density of oxygen vacancies at SrTiO3 surfaces but reduces the density of Ti interstitials located deeper. In epilayers, the density and distribution of the defects depend on the film thickness and stoichiometry. The results reveal a strong dependence of SrTiO3 native point defects and their depth distributions on epitaxial growth and process conditions.