Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors
Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors
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具有高反射纳米孔 GaN 镜的高质量 InGaN 基 LED 的制造和特性
DOI：
10.1364/prj.6.001144
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发表时间：
2018-12-01
影响因子：
7.6
通讯作者：
Xiao, Hongdi
中科院分区：
文献类型：
--
作者：
Cao, Dezhong;Yang, Xiaokun;Xiao, Hongdi
分布式布拉格反射器(DBR)是发展光电子器件的重要组成部分。在本文中，我们首次报道了纳米多孔GaN(NP-GaN)DBR作为模板用于InGaN基发光二极管(LED)的再生。在中性溶液中电化学刻蚀制备的晶片尺度的NP-GaN DBR表面光滑，反射率高(~gt；99.5%)，光谱阻带宽度宽(~gt；70 nm)。再生的LED薄膜的化学成分与参考LED相似，但与参考LED相比，使用DBR的LED的光致发光寿命、发光强度和电致发光强度提高了数倍。强度的增强归因于NP-GaN DBR的光反射效应和刻蚀方案改善了晶体质量，而光致发光寿命的提高归因于后者。(三)2018中国激光出版社
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter. (C) 2018 Chinese Laser Press