Large scale nanolithography using nanoimprint lithography
Large scale nanolithography using nanoimprint lithography
复制标题
使用纳米压印光刻的大规模纳米光刻
DOI：
10.1116/1.590934
复制
发表时间：
1999
影响因子：
1.4
通讯作者：
L. Montelius
中科院分区：
文献类型：
--
作者：
B. Heidari;I. Maximov;Eva;L. Montelius
纳米压印光刻是一种很有前途的技术，用于制造纳米尺寸的结构，其最终的生产能力类似于基于UV光刻的集成电路的生产。在这篇文章中，我们解决了晶圆级纳米压印光刻的可能性，这里提出的结果都是从2英寸。定尺寸的衬底和印模晶片。我们的纳米压印光刻设备的描述和它的一些特点进行了讨论。这些包括小于2分钟的超快压印周期时间、良好的温度监控以及基板温度的控制可能性。我们展示了压印后的完整结果，去除剩余的抗蚀剂，并剥离2英寸。华夫饼。此外，本文还详细研究了聚合物粘附与印模压力、印模深度等的关系。
Nanoimprint lithography is a promising technique for fabrication of nanometer-sized structures with an eventual throughput capacity similar to UV-lithography based production of integrated circuits. In this article we address the possibility for wafer scale nanoimprint lithography, and the results presented here are all obtained from 2 in. sized substrate and stamp wafers. Our nanoimprint lithography equipment is described and some of its characteristics are discussed. These include ultrafast imprint cycle times of less than 2 min, good temperature monitoring, and control possibility of the substrate temperature. We show complete results after imprint, removal of remaining resist, and liftoff for 2 in. wafers. Furthermore, in this article the relation between polymer sticking to the stamp applied pressure, stamp depth, etc. is studied in detail.