Single photoelectron trapping, storage, and detection in a field effect transistor
Single photoelectron trapping, storage, and detection in a field effect transistor
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DOI：
10.1103/physrevb.67.045104
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发表时间：
2003-01-15
影响因子：
3.7
通讯作者：
Yablonovitch, E
中科院分区：
文献类型：
--
作者：
Kosaka, H;Rao, DS;Yablonovitch, E
我们已经证明，一个单一的光电子可以被捕获，存储，其光电电荷检测的源极/漏极沟道的晶体管。电子陷阱可以被光致电离，并重复重置，以获得连续的单个光子。这种单光电子晶体管，在λ = 1.3妈妈电信波段工作，证明了通过使用窗口栅双量子阱InGaAs/InAlAs/InP异质结构，设计提供近零的电子g因子。一般来说，g因子工程允许将光子极化转换为电子自旋极化的选择规则。这种晶体管光电探测器可以用于标记量子中继器中光子的安全到达。在未来，光电电荷的安全到达将触发量子中继器中的隐形传态算法的开始，用于量子电信。
We have demonstrated that a single photoelectron can be trapped, stored, and its photoelectric charge detected by a source/drain channel in a transistor. The electron trap can be photoionized and repeatedly reset for the arrival of successive individual photons. This single-photoelectron transistor, operating in the lambda = 1.3 mum telecommunication band, was demonstrated by using a window-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g factor. In general, g-factor engineering allows selection rules that would convert a photon polarization to an electron-spin polarization. Such a transistor photodetector could be useful for flagging the safe arrival of a photon in a quantum repeater. In the future, the safe arrival of a photoelectric charge would trigger the commencement of the teleportation algorithm in a quantum repeater to be used for quantum telecommunications.