A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si
A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si
复制标题
DOI：
10.1109/led.2011.2162393
复制
发表时间：
2011-10-01
影响因子：
4.9
通讯作者：
Borghs, Gustaaf
中科院分区：
文献类型：
--
作者：
Das, Jo;Everts, Jordi;Borghs, Gustaaf
III族氮化物材料非常有希望用于下一代高频功率开关应用。在这封信中，我们展示了正常关闭AlGaN/GaN/AlGaN双异质结FET（DHFET）使用升压转换器电路的性能。我们的大型（57.6 mm栅宽）GaN晶体管的品质因数如下：R-ON * Q（G）为2.5 Ω。nC在V-DS = 140 V下获得。在专用高频升压转换器中研究GaN DHFET的开关性能：表征开关时间和功率损耗。我们显示转换器效率值高达96.1%，在500 kHz和93.9%，在850 kHz的输出功率为100 W。
III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6- mm gate width) GaN transistor are presented: R-ON * Q(G) of 2.5 Omega . nC is obtained at V-DS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high- frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.