Subpixel response of SOI pixel sensor for X-ray astronomy with pinned depleted diode: first result from mesh experiment-猫眼课题宝

DOI：

10.1088/1748-0221/14/06/c06005

发表时间：

2019-05

期刊：

Journal of Instrumentation

影响因子：

1.3

通讯作者：

中科院分区：

工程技术4区

文献类型：

作者：

K. Kayama;T. Tsuru;T. Tanaka;H. Uchida;S. Harada;T. Okuno;Y. Amano;J. Hiraga;M. Yoshida;Y. Kamata;S. Sakuma;D. Yuhi;Y. Urabe;H. Tsunemi;H. Matsumura;S. Kawahito;K. Kagawa;K. Yasutomi;S. Shrestha;S. Nakanishi;H. Kamehama;Y. Arai;I. Kurachi;A. Takeda;K. Mori;Y. Nishioka;K. Fukuda;T. Hida;M. Yukumoto;T. Kohmura;K. Hagino;K. Oono;K. Negishi;K. Yarita

我们一直在为日本主导的未来X射线天文使命“FORCE”开发单片有源像素传感器“XRPIX”，用于在1-80 keV的能量带观测X射线天空，角分辨率优于15 "。XRPIX是FORCE机载成像系统的两个传感器堆栈的上部，覆盖低于20 keV的X射线能量带。XRPIX器件由用于X射线探测的全耗尽高阻硅传感层、用于CMOS读出电路的低阻硅层和中间的埋氧层组成，采用0.2 μ mCMOS绝缘体上硅（SOI）工艺制作。每个像素都有一个触发电路，我们可以实现10 μs的时间分辨率，比X射线天文学CCD高几个数量级。我们最近推出了一种新型的器件结构，钉扎耗尽二极管（PDD），在XRPIX设备，并成功地提高了光谱性能，特别是在读出模式使用触发功能。在本文中，我们应用网格实验的XRPIX器件的第一次，以研究的PDD器件的光谱响应在亚像素分辨率。我们证实，PDD结构解决了在像素边界处和像素电路下方的区域中的电荷收集效率的显著劣化，这在传统类型的器件结构的单SOI结构中被发现。另一方面，谱线轮廓是偏斜的，具有低能量尾部，并且谱线峰值在像素边界附近略微偏移，这导致能量分辨率的降低。

We have been developing a monolithic active pixel sensor, “XRPIX”, for the Japan led future X-ray astronomy mission “FORCE” observing the X-ray sky in the energy band of 1–80 keV with angular resolution of better than 15′′. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV . The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 μm CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 μs time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution.

Subpixel response of SOI pixel sensor for X-ray astronomy with pinned depleted diode: first result from mesh experiment

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