Pulsed laser induced atomic layer etching of silicon
Pulsed laser induced atomic layer etching of silicon
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DOI：
10.1116/6.0002399
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发表时间：
2023-03-01
影响因子：
2.9
通讯作者：
Grigoropoulos, Costas P. P.
中科院分区：
文献类型：
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作者：
Eliceiri, Matthew;Rho, Yoonsoo;Grigoropoulos, Costas P. P.
我们演示了激光介导的硅原子层刻蚀（ALEt）。利用纳秒脉冲266纳米激光松散地聚焦在硅表面并平行于硅表面，我们解离了Cl-2气体以诱导氯化反应。然后，我们使用脉冲皮秒辐照去除氯化层。随后，我们进行了连续波（CW）激光退火，以消除皮秒激光蚀刻引起的非晶化。基于原子力显微镜（AFM）和x射线光电子能谱（XPS），我们观察到氯化和数字蚀刻的有力证据，每周期蚀刻0.85 nm，均匀性好。
We demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl-2 gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.85 nm etching per cycle with good uniformity.