Three-stage transition during silicon carbide nanowire growth
Three-stage transition during silicon carbide nanowire growth
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DOI：
10.1063/1.2696717
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发表时间：
2007-02-19
影响因子：
4
通讯作者：
Huang, Hanchen
中科院分区：
文献类型：
--
作者：
Shim, Hyun Woo;Huang, Hanchen
这封信报道了碳化硅（SiC）纳米线的制造使用气相沉积和他们的表征，使用电子显微镜。研究揭示了一个自发的过渡过程中，在生长过程中，三个明显不同的结构或形态。在第一阶段，SiC纳米线以周期性孪晶的形式存在。在第二阶段，它们呈核-壳的形式，其中核是结晶的并且调节直径，并且壳是无定形的。在第三阶段，SiC纳米线也是以核壳的形式，除了核具有均匀的直径。(c)2007年，美国物理学会。
This letter reports the fabrication of silicon carbide (SiC) nanowires using vapor deposition and their characterizations using electron microscopy. The study reveal a spontaneous transition process, during growth, among three distinctly different structures or morphologies. At the first stage, SiC nanowires are in the form of periodically twinned crystals. At the second stage, they are in the form of core-shells, with the core being crystalline and modulating diameter, and the shell being amorphous. At the third stage, SiC nanowires are also in the form of core-shells, except that the core is of uniform diameter. (c) 2007 American Institute of Physics.