Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices
Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices
复制标题
(In, Ga)As FET 器件中栅极绝缘体的氮化硅和氧化物的远程等离子体增强 CVD 沉积
DOI：
--
复制
发表时间：
1985
期刊：
影响因子：
--
通讯作者：
D. Tsu
中科院分区：
文献类型：
--
作者：
P. Richard;R. Markunas;G. Lucovsky;G. Fountain;A. Mansour;D. Tsu
我们使用远程等离子体增强化学气相沉积（RPECVD）沉积了氮化硅（Si3N4）和氧化硅（SiO2）薄膜。我们通过红外吸收（IR）、x射线光电子能谱（XPS）、俄歇电子能谱（AES）和卢瑟福后向散射（RBS）表征了薄膜的化学成分，并研究了金属绝缘体半导体（MIS）器件配置中的电性能。我们配置了沉积系统并调整了气体流速，以尽量减少：(a)氮化硅薄膜中的O污染；(b) SiO2薄膜中的OH基团。本文介绍了沉积装置和过程，并提出了等离子体相和表面反应的现象学模型。我们将两种类型的绝缘体结合在三层介质中，该介质已被用作（in,Ga） as绝缘栅场效应晶体管（IGFET）的栅极绝缘体。我们发现这些器件的电性能优于……
We have deposited silicon nitride (Si3N4) and silicon oxide (SiO2) thin films using remote plasma enhanced chemical vapor deposition (RPECVD). We have characterized the chemical composition of the films by infrared absorption (IR), x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and Rutherford backscattering (RBS), and have studied the electrical properties in metal insulator semiconductor (MIS) device configurations. We have configured the deposition system and adjusted gas flow rates in order to minimize: (a) O contamination in the Si3N4 films; and (b) OH groups in the SiO2 films. This paper describes the deposition apparatus and the process, and presents a phenomenological model for the plasma phase and surface reactions involved. We have combined both types of insulators in a trilayer dielectric that has been used as a gate insulator for (In,Ga)As insulated gate field effect transistors (IGFET’s). We have found that the electrical properties of these devices are superior to ...