Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
复制标题
开发用于与聚光太阳能发电技术集成的高带隙高温III族氮化物太阳能电池
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Goodnick
中科院分区：
文献类型：
--
作者：
Joshua J. Williams;H. McFavilen;A. Fischer;D. Ding;Steven Young;E. Vadiee;F. Ponce;C. Arena;C. Honsberg;S. Goodnick
半导体的III-N材料类别表现出用于构造与聚光太阳能设备的热接收器集成的电池的期望性质。我们设计了一种工作在450 °C的GaN-InGaN基太阳能电池。选择用于InGaN吸收体的MQW结构以通过改善的材料质量来改善电压。电池性能显示，在室温下VOC为2.4 V，在工作温度和300 x太阳下VOC为1.7 V。EQE测量显示，在高达500 °C的温度下，电池性能几乎没有下降。重复测量表明器械具有热稳定性。
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.