High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level
复制标题
0.1μm 栅极长度级别的 NMOS 器件中的高跨导和速度过冲
DOI：
10.1109/55.6946
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发表时间：
1988
影响因子：
4.9
通讯作者：
É. Ganin
中科院分区：
文献类型：
--
作者：
G. Sai;M. Wordeman;D. Kern;S. Rishton;É. Ganin
研究了栅长为0.07微米的自对准NMOS器件的输运特性，观察到了速度过冲现象，表现为迄今在硅场效应管中测得的最高跨导，以及跨导随栅长的变化趋势。在液氮温度下测得的跨导为910亩S/亩米，室温下为590亩S/亩米。速度超调，通过使这种跨导成为可能，应该会将小型化的价值扩展到比通常认为值得追求的维度更小的维度。
Transport properties are investigated in self-aligned NMOS devices with gate lengths down to 0.07 mu m. Velocity overshoot was observed in the form of the highest transconductances measured to date in Si FETs, as well as in the trend of the transconductance with gate length. The measured transconductance reached 910 mu S/ mu m at liquid-nitrogen temperature and 590 mu S/ mu m at room temperature. Velocity overshoot, by making such transconductances possible, should extend the value of miniaturization to dimensions that are smaller than what was commonly assumed to be worthwhile to pursue.<<ETX>>