Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn 1-x Cd x Se quantum islands
Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn 1-x Cd x Se quantum islands
复制标题
Zn 1-x Cd x Se量子岛中激子的声子辅助再分布过程的定量解释
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
P. Thomas
中科院分区：
文献类型：
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作者：
B. D. Don;K. Kohary;E. Tsitsishvili;H. Kalt;S. D. Baranovskii;P. Thomas
我们对含有纳米岛的量子薄膜中的光致发光（PL）的异常温度行为——所谓的“s形依赖”——进行了定量解释。CdSe/ZnSe样品的实验数据采用蒙特卡罗模拟所涉及的弛豫机制，从而提供了激子动力学的真实图像。我们能够以很好的精度同时重现PL最大值和PL半最大值时全宽度的温度依赖性。我们推导了定位中心的分布信息，并确定了一个岛内空间分离状态之间的跳跃过程。
We present a quantitative interpretation of the anomalous temperature behavior-the so-called "S-shape dependence"-of the photoluminescence (PL) in quantum films containing nanoislands. Experimental data for CdSe/ZnSe samples are modeled using Monte Carlo simulations of the involved relaxation mechanisms and thus providing a realistic picture of the exciton kinetics. We are able to reproduce simultaneously the temperature dependence of the PL maximum and of the full width at half maximum of the PL with good accuracy. We deduce information about the distribution of the localization centers and identify hopping processes between spatially separated states within one island.