Structure and electrical properties of quaternary Cr–Si–Ni–W films prepared by ion beam sputter deposition
Structure and electrical properties of quaternary Cr–Si–Ni–W films prepared by ion beam sputter deposition
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DOI：
10.1016/j.jallcom.2014.03.073
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发表时间：
2014-08
影响因子：
6.2
通讯作者：
X. Wang;Junkui Ma;Chuanbao Li;J. Shao
中科院分区：
文献类型：
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作者：
X. Wang;Junkui Ma;Chuanbao Li;J. Shao
采用母合金靶，通过离子束溅射沉积（IBSD）在抛光的Al 2 O3衬底上沉积富硅Cr-Si-Ni-W薄膜。研究了离子束电压、退火温度和沉积时间对Cr-Si-Ni-W薄膜方块电阻和TCR的影响。实验结果表明，离子束溅射沉积Cr-Si-Ni-W薄膜时，由于沉积原子和分子的迁移率高，从高能离子中获得的能量多，因此沉积态的Cr-Si-Ni-W薄膜呈晶态。XRD和AFM分析表明，Cr-Si-Ni-W薄膜中主要由Si和CrSi 2组成的大块颗粒是在IBSD过程中形成的，而不是在退火后形成的。长沉积时间对减少Cr-Si-Ni-W薄膜中大颗粒间的间隙数量和尺寸，提高薄膜结构的连续性和致密性具有重要意义，影响沉积膜的电阻率和TCR。通过对Cr-Si-Ni-W薄膜的微观分析，提出了以大颗粒为主的Cr-Si-Ni-W薄膜的导电模型，并对薄膜的导电机理进行了探讨。
Si-rich Cr–Si–Ni–W films were deposited by ion beam sputter deposition (IBSD) using a mother alloy target on polished Al2O3substrates. Effects of ion beam voltage, annealing temperature and deposition time on sheet resistance and TCR of Cr–Si–Ni–W films were studied. Experimental results reveal that the as-deposited Cr–Si–Ni–W films obtained by IBSD show a crystalline state because of a high mobility of deposition atoms and molecules with more energy obtained from high energy ions. XRD and AFM analysis show that the big massive particles mainly composed of Si and CrSi2in Cr–Si–Ni–W films are formed in the process of IBSD rather than in post-annealing stage. Long deposition time is significantly important to a decrease of the number and size of gaps between big particles in Cr–Si–Ni–W films and to an improvement of the continuity and compactness of film structure, influencing resistivity and TCR of deposition film. The conduction mechanism was discussed based on microscopic analysis and the conductive model proposed for Cr–Si–Ni–W films mainly composed of big particles.