Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs
Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs
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DOI：
10.1007/s11432-018-9791-2
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发表时间：
2019-04
期刊：
影响因子：
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通讯作者：
Qin Huang;Renhua Liu;Yabin Sun;Xiaojin Li;Yanling Shi;Changfeng Wang;Duanduan Liao;Ming Tian
中科院分区：
文献类型：
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作者：
Qin Huang;Renhua Liu;Yabin Sun;Xiaojin Li;Yanling Shi;Changfeng Wang;Duanduan Liao;Ming Tian
结论探讨了SELBOXMOSFET中BOX窗口位置对热性能和直流性能的影响。模拟结果表明，热性能与窗口与热点的距离直接相关，距离越小，晶格峰值温度越低。通道表面上的静电势的比较揭示了DC性能对BOX窗口的位置的依赖性的潜在物理机制。该窗口为来自漏极的电压提供了路径，并且所获得的电压用作反向偏压，从而增加了此处的底表面上的静电势。该增量与窗和排水侧之间的距离有关。窗口越靠近漏极侧，底部静电电势和电流越高。特别地，具有靠近漏极侧的BOX窗口的SELBOX MOSFET，其中窗口和栅极的左端
Conclusion. Thermal and DC performance dependence of the position of BOX window in SELBOX MOSFETs are explored. Simulation results show that the thermal performance is directly related to the distance between the window and hot spots; a smaller distance leads to a lower lattice peak temperature. Comparison of the electrostatic potential on the channel surfaces reveals the underlying physical mechanism of the dependence of DC performance on the location of the BOX window. The window offers a path for the voltage from the drain, and the obtained voltage works as a back bias, increasing the electrostatic potential on the bottom surface herein. The increment is related to the distance between the window and drain side. The closer the window is to the drain side, the higher are the bottom electrostatic potential and current. In particular, the SELBOX MOSFETs with a BOX window near the drain side, where the left ends of the window and gate