Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition
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DOI：
10.1063/1.1784034
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发表时间：
2004-08
影响因子：
4
通讯作者：
Dongshan Zhao;Juye Zhu;Zhongxin Liu;S. Zhang;Hui Yang;D. Jiang
中科院分区：
文献类型：
--
作者：
Dongshan Zhao;Juye Zhu;Zhongxin Liu;S. Zhang;Hui Yang;D. Jiang
采用原位光学反射率测量方法，对金属有机化学气相沉积（MOCVD）法在c面蓝宝石衬底上低温AlN缓冲层上生长GaN外延层的过程进行了监测。结果表明，AlN缓冲层经过较长的退火处理，并具有一个最佳的厚度，可以促进GaN岛的横向生长和合并。原子力显微镜观察证实，GaN外延层的质量与AlN缓冲层的表面形貌密切相关，尤其是退火处理后的晶粒尺寸和晶核密度。
The in situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above low-temperature AlN buffer layer on c-plane sapphire substrate by metalorganic chemical vapor deposition. It is found that the lateral growth of GaN islands and their coalescence is promoted in the initial growth stage if the AlN buffer layer is treated with a long annealing time and has an optimal thickness: As confirmed by atomic force microscopy observations, the quality of GaN epilayers is closely dependent on the surface morphology of AlN buffer layer, especially the grain size and nuclei density after the annealing treatment.