Epitaxial ZnO growth and p‐type doping with MOMBE

Epitaxial ZnO growth and p‐type doping with MOMBE
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DOI：
10.1002/pssb.200304290
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发表时间：
2004-03
期刊：
physica status solidi (b)
影响因子：
--
通讯作者：
I. Suemune;A. Ashrafi;M. Ebihara;M. Kurimoto;H. Kumano;T. Seong;Bong-Joong Kim;Y. Ok
I. Suemune;A. Ashrafi;M. Ebihara;M. Kurimoto;H. Kumano;T. Seong;Bong-Joong Kim;Y. Ok
中科院分区：
其他
文献类型：
--
作者：
I. Suemune;A. Ashrafi;M. Ebihara;M. Kurimoto;H. Kumano;T. Seong;Bong-Joong Kim;Y. Ok

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研究了ZnO和CdO晶体结构的控制以及ZnO中的p型掺杂。证明了锌掺杂ZnO层以及锌掺杂CdO/ZnO短周期超晶格（SPSL）的形成，并且即使在室温下也观察到来自CdO/ZnO SPSL的明亮发光。研究了N掺杂ZnO中观察到的p型导电性，并讨论了与光致发光峰的关系。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Control of ZnO and CdO crystalline structures and p‐type doping in ZnO were studied. Formation of zincblende ZnO layers as well as zincblende CdO/ZnO short‐period superlattices (SPSL) are demonstrated and bright luminescence was observed even at room temperature from the CdO/ZnO SPSL. p‐Type conductivity observed in N‐doped ZnO is studied and the relation to the photoluminescence peaks is discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)