The modeling and characterization of Silicon carbide gate turn off thyristors
The modeling and characterization of Silicon carbide gate turn off thyristors
复制标题
碳化硅门可关断晶闸管的建模与表征
DOI：
10.1109/ecce.2012.6342312
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. C. Balda
中科院分区：
文献类型：
--
作者：
Osama S. Saadeh;H. A. Mantooth;J. C. Balda
在过去的十年中，碳化硅（SiC）功率半导体器件在下一代电力电子应用中显示出巨大的前景。从电动汽车到智能电网接口，新的智能系统将需要先进的电力电子电路。已经开发出用于这些电力电子电路的几种器件，包括二极管，mosfet, jfet，晶闸管，栅关断晶闸管和igbt。本文介绍了SiC p型栅关断晶闸管（GTO）的模型开发、表征和实验验证。所开发的模型是一个基于3级物理的模型，可以高精度地预测导通状态和开关行为。该模型还包含温度效应，并准确预测设备性能从25°C到+175°C。设计了测试配置，以准确表征和测试Cree提供的8 kV ptype SiC GTO。利用实测数据验证了模型的性能。
Over the past decade Silicon carbide (SiC) power semiconductor devices have shown great promise for next generation power electronic applications. New intelligent systems that will require advanced power electronic circuitry range from electric vehicles to smart grid interfaces. Several devices have been developed for use in these power electronic circuits including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of a SiC p-type Gate Turn-off Thyristor (GTO) is presented in this paper. The developed model is a level-3 physics-based model that predicts on-state and switching behavior with high accuracy. The model also incorporates temperature effects, and accurately predicts device performances from 25 °C to +175 °C. Test configurations were designed to accurately characterize and test an 8 kV ptype SiC GTO provided by Cree. The measured data was used to validate the model's performance.