Radiation damage measurements in room-temperature semiconductor radiation detectors
Radiation damage measurements in room-temperature semiconductor radiation detectors
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室温半导体辐射探测器的辐射损伤测量
DOI：
10.1117/12.366610
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
D. Walsh
中科院分区：
文献类型：
--
作者：
B. Brunett;B. Doyle;L. Franks;R. James;R. Olsen;J. Trombka;G. Vizkelethy;D. Walsh
回顾了碲化锌镉(CZT)、碲化镉(CT)和碘化汞的辐射损伤测量文献，并用新的α粒子数据对其进行了补充。经中能质子注量辐照后，CZT条形探测器在1010p/cm2后出现明显的条间泄漏，在1012p/cm2后出现明显的体漏。在厚度为5×109p/cm2的厚平面器件中，在200 MeV质子辐照下，CZT的能量分辨率损失了两倍，而在2 mm器件中，能量分辨率几乎没有变化。当中子注量达到1010n/cm2时，慢化裂变谱中子没有能量分辨效应，但有明显的活化作用。在注量高达1.5×1010(α)/cm2的5 MeVα粒子照射下，CZT的峰位置随注量呈近线性下降，而半高宽从约7.5×109(α)/cm2开始增加。
The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide is reviewed and supplemented in the case of CZT by new alpha particle data. CZT strip detectors exposed to intermediate energy proton fluences exhibit increased interstrip leakage after 1010 p/cm2 and significant bulk leakage after 1012 p/cm2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 X 109 p/cm2 in thick planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 1010 n/cm2, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 X 1010 (alpha) /cm2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 X 109 (alpha) /cm2.