Tri-Gate Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization for Improvement of Electron Transport Properties
Tri-Gate Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization for Improvement of Electron Transport Properties
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通过连续波激光横向结晶制造三栅多晶硅薄膜晶体管以改善电子传输性能
DOI：
10.1143/jjap.51.02bj03
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Shuntaro Fujii
中科院分区：
文献类型：
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作者：
増崎裕季;廣瀬雄一;田付強;大木義路;望月敏光;Mutsunori Uenuma;斎木敏治;寺田教男;Shuntaro Fujii
将三栅极沟道结构应用于连续波激光横向结晶（CLC）制备的多晶硅薄膜晶体管（TFTs）中。我们在CLC多晶硅tft中使用三栅极结构有两个目的。一是利用CLC过程引起的拉伸应变和三栅极结构的横向应变松弛效应提高了有效电子迁移率（µeff）。另一个是通过增加具有不同晶体取向的表面的数量而导致的μ eff变化减少了三倍。将三栅极结构应用于CLC多晶硅tft中，当表面载流子密度为5× 10 - 12 cm-2时，μ eff增强8%，减小41%。这些结果有望对高性能多晶硅TFT电路的器件尺寸缩小有所帮助。
Tri-gate channel structures were applied to polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by continuous-wave (CW) laser lateral crystallization (CLC). We had two objectives in using tri-gate structures in CLC poly-Si TFTs. One was the enhancement of effective electron mobility (µ eff) by using the tensile strain induced by the CLC process and the lateral-strain-relaxation effect in tri-gate structures. The other was the reduction of µ eff variation caused by increasing the number of surfaces with different crystal orientations by up to a factor of three. By applying tri-gate structures to CLC poly-Si TFTs, both 8% µ eff enhancement and 41% reduction of µ eff variation were achieved at the surface carrier density of 5× 10 12 cm-2. These results are expected to be useful for the device size shrinkage of high-performance poly-Si TFT circuits.