Interface Properties and Schottky Barrier on the Polar Surfaces of CdS and GaP Crystals
Interface Properties and Schottky Barrier on the Polar Surfaces of CdS and GaP Crystals
复制标题
CdS 和 GaP 晶体极性表面的界面特性和肖特基势垒
DOI：
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发表时间：
1974
期刊：
影响因子：
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通讯作者：
S. Okazaki
中科院分区：
文献类型：
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作者：
M. Kusaka;M. Kanakura;S. Okazaki
研究了II-VI族和III-V族化合物晶体学极性与肖特基二极管势垒高度的关系。在CdS晶体的（0001）A和（0001 <$）B表面以及GaP的（111）A和（1 <$1 <$1 <$）B表面上，通过在超高真空中蒸发各种金属（Au、Ag、Pt、Pd）来制造二极管。势垒高度由电流-电压和电容-电压特性的测量确定。在A和B表面之间发现势垒高度的差异。从以下几个方面讨论了这种差异的原因：1）耗尽层中电场引起的匡威压电效应; 2）蒸发金属膜引入的机械应力引起的压电效应; 3）本征或吸附原子或分子的差异引起的界面态。
The correlations between the crystallographic polarity of II–VI and III–V compounds and the barrier height of Schottky diodes are investigated. The diodes are fabricated by evaporating various metals (Au, Ag, Pt, Pd) in ultra high vacuum both on (0001) A and (0001̄) B surfaces of a CdS crystal, and on (111) A and (1̄1̄1̄) B of GaP. The barrier heights are determined from the measurements of both current-voltage and capacitance-voltage characteristics. A difference of the barrier height is found between A and B surfaces. The origins of the difference are discussed in terms of the following effects; 1) the converse piezo effect due to the electric field in depletion layer, 2) the piezo effect due to the mechanical stress introduced by evaporated metal films, and 3) the interface states caused from the differences in intrinsic or adsorbed atoms or molecules.