Selective etching of ZnO films on an ITO substrate using a scanning electrochemical microscope
Selective etching of ZnO films on an ITO substrate using a scanning electrochemical microscope
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DOI：
10.1016/j.electacta.2012.07.106
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发表时间：
2012-11
影响因子：
6.6
通讯作者：
Jing-Xiao Tang;Jingying Zheng;Yu Yu-Yu;liNa Chen;Ning Zhang;Z. Tian
中科院分区：
文献类型：
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作者：
Jing-Xiao Tang;Jingying Zheng;Yu Yu-Yu;liNa Chen;Ning Zhang;Z. Tian
采用扫描电化学显微镜(SECM)和倒置光学显微镜相结合的光刻模式，在氧化锌涂层的ITO衬底上制备微结构。UME电极产生的质子作为腐蚀剂溶解了氧化锌薄膜。在溶液中加入三羟甲基氨基甲烷(Tris)后，用SECM实现了高分辨微结构。在腐蚀液中，Tris被用作消耗质子的有效反应物，使腐蚀剂不会扩散到远离尖端电极的地方。用循环伏安技术确定了在尖端电极上产生质子的合适电位，约为1.2V vs.SCE。为了优化刻蚀条件，在刻蚀过程的不同阶段利用光学显微镜图像测量了刻蚀微结构的尺寸。在氧化锌薄膜上用SECM针尖“逐点”蚀刻出福州大学的标志“FZU”。
A scanning electrochemical microscope (SECM) combined with an inverse optical microscope has been used in its lithographic mode to fabricate microstructures on a ZnO coated ITO substrate. The UME electrode generated the protons which served as the etchant to dissolve the ZnO film. High resolution microstructuring was achieved with the SECM after the addition of Tris(hydroxymethyl)aminomethane (Tris) to the solution. In the etching solution, Tris was used as an efficient reactant to consume the protons, so that the etchant could not diffuse far from the tip electrode. The cyclic voltammetry technique was employed to determine the appropriate potential, about 1.2V vs. SCE, for the generation of protons at the tip electrode. The dimensions of the etched microstructures were measured using the optical microscopic images at different stages of the etching process in order to optimize the lithographic conditions. “Point by point” etching with the SECM tip was used to create the logo “FZU” of Fuzhou University on the ZnO film.