Self‐organized fabrication of periodic arrays of vertical, ultra‐thin nanopillars on GaAs surfaces
Self‐organized fabrication of periodic arrays of vertical, ultra‐thin nanopillars on GaAs surfaces
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GaAs 表面上自组织制造垂直超薄纳米柱周期性阵列
DOI：
10.1002/pssa.201431474
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
J. Lindner
中科院分区：
文献类型：
--
作者：
T. Riedl;J. Lindner
本文提出了一种基于纳米球光刻和反应离子刻蚀(RIE)的低成本工艺，可以在 表面上自组织地制备直径小于50 nm的周期性排列的垂直侧壁的GaAs纳米管。单分散聚苯乙烯(PS)球形双层薄膜是从胶体悬浮液中沉积在经过处理的亲水性的GaAs衬底上的。镍被热蒸发，作为随后RIE的坚硬面具。扫描电子显微镜显示，去除PS球后留在衬底上的镍纳米颗粒具有与双层掩模开口形状相对应的多边形面内横截面。在低压和高功率密度下使用SiCl4的RIE反应生成了具有圆形到椭圆形截面的垂直纳米管柱，其直径比Ni纳米颗粒减小了∼1/3。这些发现可以用RIE过程中等离子体增强的表面扩散和溅射过程来解释。得到的纳米管平均直径仅为∼23 nm，具有良好的垂直度，侧壁角度为88.9 ± 0.4°，顶面平坦，在透射电子显微镜图像中可见。
This paper presents a low‐cost procedure that allows for self‐organized fabrication of periodically arranged, sub‐50 nm diameter, vertical‐sidewall GaAs nanopillars on GaAs surfaces based on nanosphere lithography, and reactive ion etching (RIE). Monodispersed polystyrene (PS) sphere double layers are deposited from a colloidal suspension on pre‐treated, hydrophilized GaAs substrates. Ni is thermally evaporated to act as a hard mask for subsequent RIE. Scanning electron microscopy reveals that the Ni nanoparticles left on the substrate after PS sphere removal have polygon‐shaped in‐plane cross‐sections corresponding to the shape of the double layer mask openings. RIE using SiCl4 at low pressure and high power density leads to the formation of vertical nanopillars with circular to oval cross‐sections, whose diameters are reduced by ∼1/3 compared to those of the Ni nanoparticles. These findings can be explained by plasma‐enhanced surface diffusion and sputtering processes during RIE. The obtained GaAs nanopillars have an average diameter of only ∼23 nm, exhibit an excellent verticality with a sidewall angle of 88.9 ± 0.4° and planar top faces, as visible in transmission electron microscopy images.
影响因子：
6.7
作者：
Arbiol, Jordi;Magen, Cesar;Eickhoff, Martin
通讯作者：
Eickhoff, Martin